PECVD (Plasma Enhanced Vapor Deposition )
Product Introduction
◆Full automatic controlon process time, temperature, air flow, valve action, reaction chamber pressure by industrial PC;
◆Imported close-loop pressure control system with high reliability;
◆Imported erosion-proof stainless steel fittings and valves ensuring bubble tight-ness of pneumatic system;
◆Perfect alarm and safe interlock devices;
◆Alarm for over-/less-temperature, MFC, reaction chamber pressure, RF, CDA pressure,N2 pressure and Water flow etc.
◆With SiO
2 Film Growth function, which can solve solar module PID problem, at the same time, can used for SiNxOy film growth. Finally makes the cell’s efficiency increased greatly.
Type
◆Wafer loading qty: 320 pieces/tube (125*125), 252 pieces/tube (156*156)
◆Purification workstation: Class-100(In Class-10000 FAB);
◆Automation degree: Automatic temperature and process control.
◆Wafer load method: Soft-landing, with characteristics: credibility, steady, non-crawling, high anchor precision, long longevity and high carrying capacity.
Key Technical Parameters
|
Wafer loading qty |
384pcs/tube (125*125), 336pieces/tube (156*156) |
|
Technical parameters |
in Wafer, inter-Wafer and inter-batch≤±3% |
|
Working temp. |
200~500℃ |
|
Precision or flat zone |
(close tube test)1200mm±1℃ |
|
Precision of gas flow |
±1%FS |
|
Gas pipe leaking rate |
1×10-7Pa.m³/S |
|
Control system |
Full imported automatic closed-loop system; 40 KHz RF power supply, soft landing and all digit control. |
|
Quantity of process tube: 1~4 tubes/set Automatic loader |